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BBO Crystals for EO Applications
  • Stocked BBO crystals available
  • High Repetition Rate and UV Transmission
  • High Peak Power Damage Resistance
  • Low Absorption and Acoustic Noise
  • High Precision Polishing and Cr-Au Electrodes
  • BBO Crystals for NLO Applications are also available, click to learn more
  • Inquire Us  
    Code Material Size Orientation Unit Price Delivery Cart
    2041-001 Beta BBO 3x3x20mm Z-cut Inquire 4 weeks
    2041-002 Beta BBO 4x4x20mm Z-cut Inquire 4 weeks
    2041-003 Beta BBO 4x4x25mm Z-cut Inquire 4 weeks

    Beta BBO crystals or beta barium borate crystals exhibit significant advantages over other materials in terms of laser power handling abilities, high damage threshold temperature stability, and substantial freedom from piezoelectric ringing. Beta BBO crystals are the most attractive candidates for high repetition rate Q-switching, pulse picking at up to 3 MHz, laser cavity dumping, regenerative amplifier control, and beam chopper. Beta barium borate (BBO) crystal is an excellent electro-optic crystal for high-power applications at the wavelength range from 200nm to 2,500nm. 

    Shanghai North Optics offers BBO crystals used in the pockels cells with high precision polishing, AR coating, and Cr-Au electrodes at and competitive price. Stocked crystals of standard specifications are ready for selection, and customized special crystals are available upon the customer's request.  Besides, we also offer BBO pockels cells.


    Click Here to visit our archives to learn more about pockels cells.


      

                            Fig.1  Transparency Curve of BBO 


    • They are the best choice for high repetition rate Q-switching:

    Because it relies on the electro-optical effect, switching time - aided by the low capacitance of the Electro-Optical Q Switch is very fast, therefore it has surpassing performance for high repetition rate lasers up to 1MHz. All-solid-state short-cavity Q-switched laser using BBO electro-optic Q-switch can generate high-energy laser with a pulse width of less than 4ns.

    •  High damage threshold and power handling capability:

    Without water cooling, the BBO electro-optical Q switch can be turned off and withstand up to 150W intracavity oscillation optical power (laser output power up to 50W).

    •  Wide Transmission range from UV to NIR:

    BBO crystals has a wide transparency range of 189nm to 3500nm, which allows it to be used in diverse applications from UV to NIR spectrum. 

    •  Low Absortion and piezoelectric ringing:

    Comparing to LiNbo3, BBO crystals are much less impaired by piezoelectric when voltage is applied. The other important feature of BBO electro-optics is their very low absorption and associated laser-induced thermal birefringence. Due to the low absorption, very little optical heating will occur at operating wavelengths in the visible and near IR.

    • Relatively high half wave voltage:

    BBO has a comparatively small electro-optic coefficient, and hence high applying voltage.North Optics offers customized BBO crystals with required dimensions as well. Our panel of engineers could offer professional consultancy and help you ascertain the optimized solution for your need.


    Cautions:

    • BBO crystals are hydroscopic and therefore it is recommended to preserve and use them in dry environment.
    • Precautions need to be taken to protect its polished surfaces since BBO is comparatively vulnerable.
    • The acceptance angle of BBO is small, so be careful when it comes to adjusting angles.
    • Shanghai North Optics engineers can offer you the best suitable and high quality crystal according to the characteristics of your lasers. The parameters we take into concern include pulse width , energy per pulse, repetition rate for a pulsed laser, power for a cw laser, divergence, laser beam diameter, wavelength tuning range, mode condition, etc.

    Specifications:

    MaterialsBeta BBO crystalsSize ToleranceL(±0.1mm)W(±0.1mm)H(+0.5/-0.1mm)
    Cut AngleZ-CutClear Aperturecentral 90% or the diameter
    Scattering of Crystals

    No visible scattering paths or centers

    when inspected by a 50mW green Laser

    Flatnessless than λ/8 @ 633nm
    Transmitting Wavefront Distortionless than λ/8 @ 633nmChamfer≤0.2mmx45°
    Chip≤0.1mmSurface Qualitybetter than 10/5 S/D (MIL-PRF-13830B)
    Parallelism≤20 arc secondsPerpendicularity≤5 arc minutes
    Angle Tolerance≤0.25°CoatingAR/AR on both end surfaces
    Cr-Au electrode on two side surfaces
    Quarter-wave voltageTBAOptical Transmission>98%
    Typical capacitance3pfDamage Threshold>500MW/cm^2 @1064nm, 10nS
    Quality Warranty Periodone year under proper use


    Physical properties of BBO:

    Crystalline structure Trigonal, space group R3c, Point group 3m Cell Parameters a = b = 12.532 Å, c = 12.717Å, Z = 6
    Melting point 1095±5℃ Phase transition point 925±5℃
    Optical Homogeneity δn ~ 10-6 /cm Mohs hardness 4
    Density 3.85 g/cm3 Specific heat 1.91J/cm3 xK
    Hydroscopicity Low Thermal expansion coefficients a,4 x 10-6/K;c, 36x 10-6/K
    Thermal Conductivity ⊥c,1.2W/m/K; //c, 1.6W/m/K Absorption Coefficient < 0.1% /cm (at 1064 nm)


    Optical properties of BBO:

    Transparency Range 189-3500 nm Refractive Indices
    at 1064 nm
    at 800 nm
    at 532 nm
    at 400 nm
    at 266 nm

    no = 1.6545, ne = 1.5392
    no = 1.6606, ne = 1.5444
    no = 1.6742, ne = 1.5547
    no = 1.6930, ne = 1.5679
    no = 1.7585, ne = 1.6126
    Thermo-optic Coefficients dno/dT = -9.3 x 10-6 /°C
    dne/dT = -16.6 x 10-6 /°C
    Electro-optic Coefficients γ11 = 2.7 pm/V, γ22, γ31 < 0.1 γ11
    Effective Nonlinearity Expressions dooe= d31 sinθ +(d11 cos3φ - d22 sin3φ) cosθ
    deoe= (d11 sin3φ + d22 cos3φ) cos2θ
    Half-wave Voltage 48 kV (at 1064 nm)
    NLO Coefficients d11 = 5.8 x d36(KDP)
    d31 = 0.05 x d11
    d22 < 0.05 x d11
    Damage Threshold (Bulk)
    at 1064 nm
    at 532 nm

    5 GW/cm2 (10 ns); 10 GW/cm2 (1.3 ns)
    1 GW/cm2 (10 ns); 7 GW/cm2 (250 ps)
    Phase-matchable SH Wavelengths: 189 - 1750 nm

    Features of BBO crystal

    • Ultra-thin crystals can be used for ultra-fast (<10 fs) applications
    • Wide phase matching range of various second-order nonlinear interactions in almost the entire transparent range
    • The highest nonlinearity among all UV nonlinear crystals
    • High laser induced damage threshold (LIDT)
    • Wide transmittance range from 188 nm to 5.2μm (appropriate transparency @3μm-5.2μm, tens of μm thick crystal)
    • Extremely low capacitance (1< pF) will permit high repetition rate switching with rise times on the order of 100 ps or less
    • High damage threshold capable of withstanding high peak power intensities of samller beam size and therefore suitable for compact design ( However, small crystal aperture leads to diffraction losses and hence might increase the insertion losses.)
    • Not prone to piezo-electric ringing
    • Low absorption and associated laser-induced thermal birefringence
    • High extinction ratio

    Applications:

    1. High repetition rate DPSS Q-switches
    2. High repetition rate regenerative amplifier control
    3. Cavity dumping and Beam chopper
    4. Low dispersion suitable for short pulse regenerative amplifiers




              


    Fig.1  Qualitative comparison of acoustic ringing in BBO and LiNbO3 

                                       The intensity transmitted through the LiNbO3 Pockels cell varies greatly due to piezoelectric effects, whereas the light transmitted through the

                                       BBO Pockels cell follows the decay of the applied high voltage pulse with no evident acoustic ringing

                                                                                                       

    Application Notes:

    Calculation of Quarter-wave Voltage

    The voltage required to produce a retardance of π radians is called the halfwave voltage or simply Vπ. For an optical input linearly polarized 45o applying a halfwave voltage rotates the polarization by 90o. When the output wave is passed through a linear the resultant can be rapidly modulated from maximum intensity to minimum intensity by rapidly changing the voltage applied to the crystal from 0 volts to Vπ.

    The halfwave voltage of BBO is dependent on the optical wavelength and is given by:

    Where   λ=optical wavelength 
             d=electrode spacing 
             L=optical path length 
             r22=electro-optic coefficients 
             no=ordinary indices of refraction

     


    EO Q-Switch 1/4Wave Voltage Vs wavelength (3x3x20mm) 
    1/4 Wave Voltage @1030nm : Vπ/2 =3388V