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MgO:LiNbO3 Crystals for EO Applications
Low Half Wave Voltage
  • High Electro-Optical Coefficients
  • Brewster angle for laser of low amplification
  • Higher Damage Threshold than none doping LiNbO3
  • Preferable for Er:YAG, Ho:YAG and Tm:YAG lasers
  • SAW LiNbO3 WafersNonlinear LiNbO3 and MgO:LiNbO3LiNbO3 Crystals for EO Modulations, Optical Grade LiNbO3 Wafers, and MgO:PPLN Crystals are also available
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    Modules or Types:

    Various types of crystals are available upon your request:

    1. Crystal boules with inspection polishing
    2. Crystal blanks with inspection polishing
    3. Crystals with laser grade polishing
    4. Crystals with AR coating and Cr-Au electrode

     

    Specifications:

    Crystal Materials MgO(5mol%):LiNbO3 crystals Size Customized
    Size Tolerance +/-0.1mm Length Tolerance +/-0.2mm
    Surface Quality 20/10 S/D Parallelism <20 arc seconds
    Flatness < Lambda/10 @633nm Chamfer 0.1-0.3mmx45°
    Chips <0.15mm Side Surface Fine ground
    Orientation Tolerance < 10 arc minutes Wavefront Distortion <Lambda/4@633nm
    Extinction Ratio >200:1 Coating AR/AR@1064nm or customized
    Damaging Threshold >300mW/cm^2@1064nm 10nS 10Hz pulse Electrode on Side Surface Chrome gold electrode (Cr+Au)
     

     

    Basic Properties:

    Crystal Structure Trigonal, space group R3c Cell Parameters a = 0.515, c = 13.863, Z = 6
    Melting Point 1255±5℃ Curie Point 1140±5℃
    Mohs Hardness 5 Density 4.64 g/cm3
    Absorption Coefficient ~ 0.1%/cm @ 1064nm Solubility insoluble in H2O
    Relative Dielectric Constant eT11/e0: 85
    eT33/e0: 29.5
    Thermal Expansion Coefficients( @ 25℃) ||a, 2.0 x 10-6 /K
    ||c, 2.2 x 10-6 /K
    Thermal Conductivity 38 W /m /K @ 25℃
     

     

    Linear Optical Properties:

    Transparency Range 420-5200nm Refractive Indices ne=2.146, no = 2.220 @ 1300nm
    ne= 2.156, no = 2.232 @ 1064nm
    ne= 2.203, no = 2.286 @ 632.8nm
    Optical Homogeneity ~ 5 x 10-5 /cm

    Sellmeier Equations (λ in mm)

    n2o (λ) = 4.9048+0.11768/(l2 - 0.04750) - 0.027169l2
    n2e (λ) = 4.5820+0.099169/(l2 - 0.04443) - 0.021950l2
     

     

    Nonlinear Optical Properties:

    NLO Coefficients d33 = 34.4 pm/V
    d31 = d15 = 5.95 pm/V
    d22 = 3.07 pm/V
    Efficiency NLO Coefficients deff =5.7 pm/V or ~14.6 x d36 (KDP)
    for frequency doubling 1300nm
    deff =5.3 pm/V or ~13.6 x d36(KDP)
    for OPO pumped at 1064nm
    deff =17.6 pm/V or ~45 x d36(KDP)
    for quasi-phase-matched structure
    Electro-Optic Coefficients gT33 = 32 pm/V, gS33 = 31 pm/V
    gT31 = 10 pm/V, gS31=8.6 pm/V
    gT22 = 6.8 pm/V, gS22= 3.4 pm/V
    Half-Wave Voltage, DC
    Electrical field||z, light ^z
    Electrical field||x or y, light||z
    3.03 KV
    4.02 KV

    MgO:LiNbO3 crystals have become one of the most broadly used materials for Q-switches and phase modulators for their high EO coefficients, MgO:LiNbO3 has a higher damaging threshold than the non-doping LiNbO3 crystals. With an electric field applied transverse to the direction of light propagation, Pockels cells based on LiNbO3 can be configured to operate at a lower voltage than Pockels cells based on KD*P. LiNbO3 can also be a good choice for infrared wavelengths up to 3.0µm.

    Shanghai North Optics offers high-quality polished, AR coating and Au-Cr electroded MgO:LiNbO3 crystals used in pockels cells, the MgO doping of 0.6%,1.0%, and 5% is available. A series of lithium-niobate products including SAW LiNbO3 WafersNonlinear LiNbO3 and MgO:LiNbO3LiNbO3 Crystals for EO ModulationsOptical Grade LiNbO3 Wafers, and MgO:PPLN Crystals, LiNbO3 Pockels Cells are also procurable.