RTP Q-Switch-NORTH OPTICS-Laser Components, IR optics, Scintillators, Crystals wafers|A Leading Manufacturer Of Optical Components

RTP Q-Switch

Ideal for EO modulation at high repetition rates

High damage threshold capable of handling high-power lasers

High extinction ratio and low half-wave voltage

Both stocked and custom versions available could be sold in matched pairs or in single crystal

Applications: Laser Ranging, Laser Radar, medical laser, Industrial Laser, Laser power/phase modulation, Pulse Picker Inquire Us

Specifications:

Dimensional Tolerance	W(+/-0.1) x H(+/-0.1) x L(+0.5/-0.1) mm
Parallelism	≤5″
Surface Quality	20/10 S/D
Flatness	λ/10@633nm
Transmitted Wavefront Distortion	λ/6@633nm
Extinction Ratio	>20dB
Coating	AR@1064nm(R<0.2%), or Custom
Damage Threshold	600MW/cm² 10ns 10Hz at 1064nm

Material Properties:

Crystal structure	Orthorhombic
Cell Parameters	a = 12.96 Å; b =10.56 Å; c =6.49 Å
Mohs hardness	5
Density, g/cm3	3.6
Melting Point:	~ 1000˚C
Ferroeletric transition temp.	~ 810°C
Color	Colorless
Thermal Expansion Coefficients (/K)	αx=1.01x10-5, αy =1.37x10-5, αz =-4.17x10-6
Dielectric Constant	Eeff= 13.0
Thermo-optical coefficients (dλ/dT)	-0.029 nm / °C
Electro-optic constants	Y-cut: r51=38.5 pm/V X-cut: r33=35 pm/V,r23=12.5 pm/V, r13=10.6 pm/V
Nonlinear Coefficients:	d15 = 2.0 pm/V; d24 = 3.6 pm/V; d31= 2.0 pm/V d32 = 3.6 pm/V; d33 = 8.3 pm/V
Electrical Resistivity	around 1011-1012ohm·cm
Hygroscopic	no
Static Half Wave Voltage at 1064 nm	4x4x20 mm: 1,600 V 6x6x20 mm: 2,400 V
Transmitting range:	350~4500 nm
Sellmeier equations(λ in um)	nx2=2.15559 + 0.93307[1-(0.20994/λ)2] - 0.01452λ2 ny2=2.38494 + 0.73603[1-(0.23891/λ)2] - 0.01583 λ2 nz2=2.27723 + 1.11030[1-(0.23454/λ)2] - 0.01995λ2

Modules or Types:

Type	Size of Single Crystal(mm)	Length of Holder(mm)	Half-wave voltage(V)
QR2205A	2X2X5	12	1600V
QR3305A	3X3X5	14	2400V
QR4405A	4X4X5	14	3200V
QR4410A	4X4X10	25	1600V
QR6605A	6X6X5	14	4800V
QR6610A	6X6X10	25	2400V
QR8805A	8X8X5	14	6400V
QR8810A	8X8X10	25	3200V
QR1005A	10X10X5	14	8000V

RTP (Rubidium Titanyl Phosphate – RbTiOPO4) is an isomorph of KTP crystal that is used in nonlinear and Electro-Optical applications. RTP crystals are an excellent alternative EO modulation for high-power lasers due to a combination of their high damage thresholds with large nonlinear optical and electro-optical coefficients. The Crystal is also advantageous in the aspects that it induces no piezoelectric ringing and is not susceptible to dampness. In addition, it requires a low half-wave voltage to operate.

Shanghai North Optics offers Standard and Custom RTP Q-Switches to generate pulsed laser output with high peak power. Our RTP Q switch exhibits superior capabilities for EO modulations at high repetition rates, including Laser Ranging, Laser Radar, lasers for medical treatment and lasers for industrial manufacturing, Laser power/phase modulation, Pulse Picker, etc. with a high extinction ratio greater than 20dB, and a high damage threshold of 600MW/cm2 10ns 10Hz at 1064nm. Over the years, we have been proceeding with and breaking through the fabrication technique of the RTP crystals to attain reproducible high qualities. We could offer the RTP Crystal Q-Switch in two versions: in matched pairs or as a single crystal.

The standard RTP Q-switch is available in dimensions from 2x2x5mm to 10x10x5mm, whilst other custom dimensions and specifications are accessible upon request. Regarding the coating, we provide a 1064nm anti-reflection (R<0.2%) standard coating, or other custom coatings could be tailored. Besides, we also provide RTP crystals that are fit for a wide range of nonlinear optical applications.

Products

LINK

PRODUCTS

NORTH OPTICS Technology Co., Ltd.