Products

MgAl2O4 Substrates
  • Stocked and custom MaAl2O4 (or Spinel) Substrates available
  • Maximum diameter: 2 inches, typical thickness 0.5/1.0mm
  • Surface Roughness: Ra < 0.5nm
  • Clean package: 1000-grade clean room and 100-grade bags
  • Orientation of MgAl2O4 substrates:<100>,<110>,<111>
  • Applications: epitaxial thin film growth in ferroelectric and high-temperature superconductor (HTS) devices, growth of high-quality GaN films, III-V nitrides device, bulk acoustic wave, and microwave devices
  • Inquire Us  
    CodeSizeThicknessOrientationSurface FinishUnit PriceDeliveryCart
    644-0015x5mm0.5mm<100>SSPInquire2 weeks
    644-0025x5mm0.5mm<100>DSPInquire2 weeks
    644-0035x5mm0.5mm<110>SSPInquire2 weeks
    644-0045x5mm0.5mm<111>SSPInquire2 weeks
    644-00510x10mm0.5mm<100>SSPInquire2 weeks
    644-00610x10mm0.5mm<100>DSPInquire2 weeks
    644-00710x10mm0.5mm<110>SSPInquire2 weeks
    644-00810x10mm0.5mm<111>SSPInquire2 weeks
    644-009Φ12.7mm0.5mm<100>SSPInquire2 weeks
    644-010Φ12.7mm0.5mm<100>DSPInquire2 weeks
    644-011Φ25.4mm0.5mm<100>SSPInquire2 weeks
    644-012Φ25.4mm0.5mm<100>DSPInquire2 weeks
    644-013Φ50.8mm0.5mm<100>SSPInquireInquire
    644-014Φ50.8mm0.5mm<100>DSPInquireInquire

    Magnesium Aluminate (MgAl2O4) single crystals, also known as spinels, possess a cubic crystal structure and exhibit excellent mechanical, thermal, and chemical stabilities. MgAl2O4 substrates exhibit optical transmittance over a wide spectral range, from UV to IR, along with low dielectric loss, making them suitable for optical and photonic applications. MgAl2O4 finds widespread usage in bulk acoustic wave and microwave devices and is an excellent substrate material for fast epitaxial growth of III-V nitrides in IC with moderate cost. MgAl2O4 is cleaved on the (100) plane,  therefore GaN LD cavities can be obtained by cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. 

    Shanghai North Optics provides stock epi-ready MgAl2O4 wafers and custom MgAl2O4 wafers.

    Common Specifications:

    MaterialMgAl2O4 crystalsOrientation<100>,<110>,<111>
    Orientation Error±0.5°Maximum Diameter20mm
    Typical Thickness0.5mm, 1.0mmThickness Tolerance±0.05mm
    Size Tolerance±0.1mmSurface FinishSSP or DSP
    RoughnessRa<0.5nmCleaness and Package1000 grade clean room, 100 grade bags

    Physical Properties:

    Crystal StructureCubic: a = 8.083 ÅGrowth MethodCzochralski
    Density3.64 g/cm3Melt Point2130℃
    Hardness8.0 (Mohns)Thermal Expansion7.45 (x10-6/℃)
    Phase Velocity6500 m/s at (100> shear wave)Propagation Loss6.5 dB/ms
    Typical Growth Direction<100> and <110>ColorColorless
    Dielectric Constant8-9