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SGGG (Substituted GGG) Single Crystals and Wafers
Low optical losses(<0.1%/cm) and fine chemical and mechanical properties
  • High thermal conductivity (7.4W m-1 K-1) and High laser damage threshold (>1GW/cm2)
  • Maximum diameter: 4 inches; typical thickness 0.5/1.0mm
  • Clean package: class 1000 clean room and class 100 bags
  • Typical orientation of SGGG substrates: <111>
  • Applications: liquid phase epitaxy (LPE), magneto-optical film, YIG& BIG film epitaxial growth
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    Specifications:

    Material SGGG single crystals Orientation <111>
    Orientation Error ±0.2° Maximum Diameter 4 inches
    Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
    Size Tolerance ±0.1mm Surface Finish SSP or DSP
    Roughness ≤1nm Cleanness and Package class 1000 clean room, class 100 bags


    Material Properties:

    Material SGGG Chemical Formula /
    Lattice Constant 12.497Å Growth Method Czochralski
    Density 7.09g/cm3 Mohs Hardness 7.5
    Melting Point 1730℃ Refractive Index 1.954@1064nm

    GGG, SGGG, and NGG Garnets are used as substrates for liquid phase epitaxy (LPE). GGG substrates are substrates oriented for growing magneto-optical film. GGG substrates are often used to grow the YIG or BIG film placed in a magnetic field, which is an indispensable part of an infrared isolator operating within the 1.3-1.5μm range utilized for optical communication. GGG single crystal substrates of different tangential can achieve the best lattice match with the magneto-optical material, thus ensuring the YIG and BIG film epitaxial growth is successful. SGGG Single-crystal is excellent for growing bismuth-substituted iron garnet epitaxial films.